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YJQ4666B Datasheet, Yangzhou Yangjie

YJQ4666B transistor equivalent, p-channel enhancement mode field effect transistor.

YJQ4666B Avg. rating / M : 1.0 rating-12

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YJQ4666B Datasheet

Application


* Battery charge
* Load switching in Cellular handset
* Ultraportable applications
* Absolute Maximum R.

Description


* Trench Power LV MOSFET technology
* Low RDS(ON)
* Low Gate Charge Applications
* Battery charge
* Load switching in Cellular handset
* Ultraportable applications
* Absolute Maximum Ratings (TA=25℃unless otherwise noted.

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